Obtaining ZnO/CIS heterostructures
Identifieur interne : 002895 ( Main/Repository ); précédent : 002894; suivant : 002896Obtaining ZnO/CIS heterostructures
Auteurs : RBID : Pascal:11-0325114Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
ZnO/CuInSe2 heterostructures were obtained by sequential evaporation of elements. Firstly, a layer of Zn was deposited on the glass substrate by the magnetron sputtering method in vacuum. Needle-shaped nanostructures of Zn0 were grown from the prepared Zn films by thermal annealing in the air. Secondly, Se, In and Cu layers were sequentially deposited onto these structures. The obtained samples were then annealed at 400 °C to form the CuInSe2 (CIS) compound. The morphology, composition and phase identification were obtained using the scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction analysis methods.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 002E23
Links to Exploration step
Pascal:11-0325114Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Obtaining ZnO/CIS heterostructures</title><author><name sortKey="Mihailova, I" uniqKey="Mihailova I">I. Mihailova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>G. Liberts' Innovative microscopy centre, Daugavpils University, 1 Parades St.</s1><s2>Daugavpils, 5401</s2><s3>LVA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lettonie</country><wicri:noRegion>Daugavpils, 5401</wicri:noRegion></affiliation></author><author><name sortKey="Gerbreders, V" uniqKey="Gerbreders V">V. Gerbreders</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>G. Liberts' Innovative microscopy centre, Daugavpils University, 1 Parades St.</s1><s2>Daugavpils, 5401</s2><s3>LVA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lettonie</country><wicri:noRegion>Daugavpils, 5401</wicri:noRegion></affiliation></author><author><name sortKey="Tamanis, E" uniqKey="Tamanis E">E. Tamanis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>G. Liberts' Innovative microscopy centre, Daugavpils University, 1 Parades St.</s1><s2>Daugavpils, 5401</s2><s3>LVA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lettonie</country><wicri:noRegion>Daugavpils, 5401</wicri:noRegion></affiliation></author><author><name sortKey="Sledevskis, E" uniqKey="Sledevskis E">E. Sledevskis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>G. Liberts' Innovative microscopy centre, Daugavpils University, 1 Parades St.</s1><s2>Daugavpils, 5401</s2><s3>LVA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lettonie</country><wicri:noRegion>Daugavpils, 5401</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0325114</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0325114 INIST</idno><idno type="RBID">Pascal:11-0325114</idno><idno type="wicri:Area/Main/Corpus">002E23</idno><idno type="wicri:Area/Main/Repository">002895</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3093</idno><title level="j" type="abbreviated">J. non-cryst. solids</title><title level="j" type="main">Journal of non-crystalline solids</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathode sputtering</term><term>Chalcopyrite</term><term>Copper Indium Selenides Mixed</term><term>Dispersive spectrometry</term><term>Heterostructures</term><term>Microstructure</term><term>Nanostructures</term><term>Phase composition</term><term>Scanning electron microscopy</term><term>Semiconductor materials</term><term>Thermal annealing</term><term>XRD</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pulvérisation cathodique</term><term>Recuit thermique</term><term>Microstructure</term><term>Composition phase</term><term>Microscopie électronique balayage</term><term>Spectrométrie dispersive</term><term>Diffraction RX</term><term>Semiconducteur</term><term>Oxyde de zinc</term><term>Hétérostructure</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Nanostructure</term><term>ZnO</term><term>CuInSe2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">ZnO/CuInSe<sub>2</sub> heterostructures were obtained by sequential evaporation of elements. Firstly, a layer of Zn was deposited on the glass substrate by the magnetron sputtering method in vacuum. Needle-shaped nanostructures of Zn0 were grown from the prepared Zn films by thermal annealing in the air. Secondly, Se, In and Cu layers were sequentially deposited onto these structures. The obtained samples were then annealed at 400 °C to form the CuInSe<sub>2</sub> (CIS) compound. The morphology, composition and phase identification were obtained using the scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction analysis methods.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3093</s0></fA01><fA02 i1="01"><s0>JNCSBJ</s0></fA02><fA03 i2="1"><s0>J. non-cryst. solids</s0></fA03><fA05><s2>357</s2></fA05><fA06><s2>11-13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Obtaining ZnO/CIS heterostructures</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>17th International Symposium on Non-Oxide and New Optical Glasses (XVII ISNOG), June 13-18, 2010, Ningbo, China</s1></fA09><fA11 i1="01" i2="1"><s1>MIHAILOVA (I.)</s1></fA11><fA11 i1="02" i2="1"><s1>GERBREDERS (V.)</s1></fA11><fA11 i1="03" i2="1"><s1>TAMANIS (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>SLEDEVSKIS (E.)</s1></fA11><fA12 i1="01" i2="1"><s1>ZHANG (Long)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>QIU (Jianrong)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>G. Liberts' Innovative microscopy centre, Daugavpils University, 1 Parades St.</s1><s2>Daugavpils, 5401</s2><s3>LVA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, P.O. Box 800-211</s1><s2>Shangai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Zhejiang University</s1><s3>CHN</s3><sZ>2 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>Shanghai Institute of Optics and Fine Mechanics</s1><s2>Shangai 201800</s2><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Ningbo University</s1><s2>Nigbo</s2><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>Chinese Academy of Science (CAS)</s1><s2>Beijing</s2><s3>CHN</s3><s9>org-cong.</s9></fA18><fA20><s1>2215-2218</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14572</s2><s5>354000192186020020</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0325114</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of non-crystalline solids</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>ZnO/CuInSe<sub>2</sub> heterostructures were obtained by sequential evaporation of elements. Firstly, a layer of Zn was deposited on the glass substrate by the magnetron sputtering method in vacuum. Needle-shaped nanostructures of Zn0 were grown from the prepared Zn films by thermal annealing in the air. Secondly, Se, In and Cu layers were sequentially deposited onto these structures. The obtained samples were then annealed at 400 °C to form the CuInSe<sub>2</sub> (CIS) compound. The morphology, composition and phase identification were obtained using the scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction analysis methods.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Cathode sputtering</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Microstructure</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Microstructure</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Composition phase</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Phase composition</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Composición fase</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heterostructures</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Nanostructure</s0><s5>20</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Nanostructures</s0><s5>20</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>220</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>XVII ISNOG International Symposium on Non-Oxide and New Optical Glasses</s1><s2>17</s2><s3>Nigbo CHN</s3><s4>2010-06-13</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002895 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 002895 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:11-0325114
|texte= Obtaining ZnO/CIS heterostructures
}}
| This area was generated with Dilib version V0.5.77. |  |